r07ds0850ej0100 rev.1.00 page 1 of 6 aug 27, 2012 data sheet n0604n n-channel mosfet 60 v, 82 a, 6.5 m description the n0604n is n-channel mos field effect transistor designed for high current switching applications. features ? low on-state resistance r ds (on) = 6.5 m max. (v gs = 10 v, i d = 41 a) ? low input capacitance c iss = 4150 pf typ. (v ds = 25 v, v gs = 0 v) ? high current i d(dc) = 82 a ? rohs compliant ordering information part no. lead plating packing package N0604N-S19-AY ? 1 pure sn (tin) tube 50 p/tube to-220 1.9 g typ. note: ? 1. pb-free (this product does not cont ain pb in the external electrode.) absolute maximum ratings (t a = 25 c, all terminals are connected) item symbol ratings unit drain to source voltage (v gs = 0 v) v dss 60 v gate to source voltage (v ds = 0 v) v gss 20 v drain current (dc) i d(dc) 82 a drain current (pulse) ? 1 i d(pulse) 200 a total power dissipation (t c = 25 c) p t1 116 w total power dissipation (t a = 25 c) p t2 1.5 w channel temperature t ch 150 c storage temperature t stg ? 55 to + 150 c single avalanche current ? 2 i as 35 a single avalanche energy ? 2 e as 125 mj thermal resistance channel to case (drain) thermal resistance r th(ch-c) 1.08 c/w channel to ambient thermal resistance ? 2 r th(ch-a) 83.3 c/w notes: ? 1. pw 10 s, duty cycle 1% ? 2. starting t ch = 25c, r g = 25 , v dd = 30 v, v gs = 20 0 v, l = 100 h r07ds0850ej0100 rev.1.00 aug 27, 2012
n0604n chapter title r07ds0850ej0100 rev.1.00 page 2 of 6 aug 27, 2012 electrical characteristics (t a = 25 c, all terminals are connected) item symbol min. typ. max. unit test conditions zero gate voltage drain current i dss 1 a v ds = 60 v, v gs = 0 v gate leakage current i gss 100 na v gs = 20 v, v ds = 0 v gate to source cut-off voltage v gs(off) 2.0 4.0 v v ds = 10 v, i d = 1 ma forward transfer admittance ? 1 | y fs | 30 s v ds = 5 v, i d = 41 a drain to source on-state resistance ? 1 r ds(on) 5.1 6.5 m v gs = 10 v, i d = 41 a input capacitance c iss 4150 pf v ds = 25 v, output capacitance c oss 310 pf v gs = 0 v, reverse transfer capacitance c rss 165 pf f = 1 mhz turn-on delay time t d(on) 24 ns v dd = 30 v, i d = 41 a, rise time t r 8 ns v gs = 10 v, turn-off delay time t d(off) 64 ns r g = 0 fall time t f 7 ns total gate charge q g 75 nc v dd = 48 v, gate to source charge q gs 21 nc v gs = 10 v, gate to drain charge q gd 21 nc i d = 82 a body diode forward voltage ? 1 v f(s?d) 1.5 v i f = 82 a, v gs = 0 v reverse recovery time t rr 38 ns reverse recovery charge q rr 39 nc i f = 82 a, v gs = 0 v, di/dt = 100 a/ s note: ? 1. pulsed test circuit 3 gate charge v gs = 20 0 v pg. r g = 25 50 d.u.t. l v dd test circuit 1 avalanche capability pg. d.u.t. r l v dd test circuit 2 switching time r g pg. i g = 2 ma 50 d.u.t. r l v dd i d v dd i as v ds bv dss starting t ch v gs 0 = 1 s duty cycle 1% v gs wave form v ds wave form v gs v ds 10% 0 0 90% 90% 90% v gs v ds t on t off t d(on) t r t d(off) t f 10% 10%
n0604n chapter title r07ds0850ej0100 rev.1.00 page 3 of 6 aug 27, 2012 typical characteristics (t a = 25 c) derating factor of forward bias safe operating area total power dissipation vs. case temperature dt - percentage of rated power - % 0 20 40 60 80 100 120 140 0 25 50 75 100 125 150 175 t c - case temperature - c p t - total power dissipation - w 0 50 100 150 0 25 50 75 100 125 150 175 t c - case temperature - c forward bias safe operating area i d - drain current - a 0.1 1 10 100 1000 0.1 1 10 100 p w = 1 0 0 s 1 m s t c = 25 c single pulse r d s ( o n ) l i m i t e d i dc(pulse) = 200 a power dissipation limited dc i dc ( dc ) = 82 a 10 ms v ds - drain to source voltage - v transient thermal resistance vs. pulse width r th(t) - transient thermal resistance - c/w 0.01 0.1 1 10 100 1000 r th(ch-a) = 83.3 c/w single pulse r th(ch-c) = 1.08 c/w pw - pulse width - s 0.1 m 1 m 10 m 100 m 1 10 100 1000
n0604n chapter title r07ds0850ej0100 rev.1.00 page 4 of 6 aug 27, 2012 drain current vs. drain to source voltage forward transf er characteristics i d - drain current - a 0 100 200 300 012345 v gs = 10 v pulsed v ds - drain to source voltage - v i d - drain current - a 0.001 0.01 0.1 1 10 100 0123456 pulsed v ds = 10 v t a = 125 c 75 c 25 c ?25 c v gs - gate to source voltage - v gate to source cut-off voltage vs. channel temperature forward transfer admittance vs. drain current v gs(off) - gate to source cut-off voltage - v 0 1 2 3 4 -50 0 50 100 150 v ds = 10 v i d = 1.0 ma t ch - channel temperature - c | y fs | - forward transfer admittance - s 1 10 100 0.1 1 10 100 pulsed v ds = 5 v t a = 125c 75c 25c ?25c i d - drain current - a drain to source on-state resistance vs. drain current drain to source on-state resistance vs. gate to source voltage r ds(on) - drain to source on-state resistance - m 0 2 4 6 8 10 12 14 1 10 100 1000 pulsed v gs = 10 v i d - drain current - a r ds(on) - drain to source on-state resistance - m 0 5 10 15 20 0 5 10 15 20 pulsed i d = 41 a v gs - gate to source voltage - v
n0604n chapter title r07ds0850ej0100 rev.1.00 page 5 of 6 aug 27, 2012 drain to source on-state resistance vs. channel temperature capacitance vs. drain to source voltage r ds(on) - drain to source on-state resistance - m 0 2 4 6 8 10 12 14 -50 0 50 100 150 pu ls e d v gs = 10 v i d = 41 a t ch - channel temperature - c c iss , c oss , c rss - capacitance - pf 100 1000 10000 0.01 0.1 1 10 100 v gs = 0 v f = 1 mhz c rss c iss c oss v ds - drain to source voltage - v switching characteristics dynamic input characteristics t d (on) , t r , t d (off) , t f - switching time - ns 1 10 100 1000 0.1 1 10 100 v dd = 30 v v gs =10 v r g = 0 t d(on) t r t d(off) t f i d - drain current - a v gs - gate to source voltage - v 0 2 4 6 8 10 0 20406080 i d = 82 a v dd = 12 v 30 v 48 v q g - gate charge - nc source to drain diode forward voltage reverse recovery time vs. diode forward current i f - diode forward current - a 0.01 0.1 1 10 100 1000 0 0.4 0.8 1.2 1.6 pulsed v gs = 10 v 0 v v f(s-d) - source to drain voltage - v t rr - reverse recovery time - ns 1 10 100 0.1 1 10 100 v gs = 0 v di/dt = 100 a/ s i f - diode forward current - a
n0604n chapter title r07ds0850ej0100 rev.1.00 page 6 of 6 aug 27, 2012 package drawing (unit: mm) to-220 1. gate 2. drain 3. source 4. fin (drain) 123 4 2.54 typ. 2.54 typ. 2.40.2 1.30.2 0.50.2 8.7 typ. 3.0 typ. 6.3 min. 2.80.3 12.7 min. 15.9 max. 0.80.1 10.2 max. 4.8 max. 1.520.2 3.60.2 equivalent circuit source body diode gate drain remark strong electric field, when exposed to this devic e, can cause destruction of the gate oxide and ultimately degrade the device operation. steps must be taken to stop generation of static electricity as much as possible, and quickl y dissipate it once, when it has occurred.
all trademarks and registered trademarks are t he property of their respective owners. c - 1 revision history n0604n data sheet description rev. date page summary 1.00 aug 27, 2012 ? first edition issued
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